單晶矽片
規格：3寸至4寸單晶矽N型輕摻矽片，3寸至4寸單晶矽N/P型重摻矽片
通過摻磷或摻硼，采用MCZ工藝，生產尺寸為3寸、4寸，電阻0.003-55Ω.cm，厚度200-350um等不同N型單晶矽片或P型單晶矽片，並可根據客戶要求生產定位邊單晶矽片，倒角單晶矽片，N型單晶矽片，P型單晶矽片等，電阻率和厚度根據客戶要求生產。
3寸單晶矽N型輕摻矽片
3-inch mono crystal silicon N-type light doped wafer
|
電阻率Ω·CM |
厚度μm |
晶向 |
壽命μs |
外徑mm |
摻雜劑 |
形態 |
電阻率徑向不均勻性 |
||||
|
線切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
5-10 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
10-15 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
15-20 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
20-25 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
25-30 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
30-35 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
35-40 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
40-45 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
45-50 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
50-55 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
4寸單晶矽N型輕摻矽片
4-inch mono crystal silicon N-type light doped wafer
|
電阻率Ω·CM |
厚度μm |
晶向 |
壽命μs |
外徑mm |
摻雜劑 |
形態 |
電阻率徑向不均勻性 |
||||
|
線切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
5-10 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
10-15 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
15-20 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
20-25 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
25-30 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
30-35 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
35-40 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
40-45 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
45-50 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
50-55 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
3寸單晶矽重摻矽片
3-inch mono crystal silicon heavy doped wafer
|
電阻率Ω·CM |
厚度μm |
晶向 |
型號 |
外徑mm |
摻雜劑 |
形態 |
電阻率徑向不均勻性 |
||||
|
線切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
0.003-0.005 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.005-0.008 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.02-0.03 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
4寸單晶矽重摻矽片
4 inch monocrystal silicon heavy doped wafer
|
電阻率Ω·CM |
厚度μm |
晶向 |
型號 |
外徑mm |
摻雜劑 |
形態 |
電阻率徑向不均勻性 |
||||
|
線切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
0.003-0.005 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.005-0.008 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.02-0.03 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|