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The company was founded in 1992, is a semiconductor company specializing in R & D, manufacturing, sales as one of the enterprises, covers an area of 200 acres, has a high standard production workshop of 30000 square meters, including 8000 square meters area of 10000 purification, purification 1000 area of 2000 square meters.

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At any time, we should pay attention to the real time dynamic of the core electronics, understand the latest progress of the corcore electronics, and understand the core electronics around you for the first time.

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The company's main products include raw silicon wafer products, OJ dlffusion products, GPP product three series, including 3 ", 4", 5 ", 6", OJ and GPP products, including STD, FR, HER, SF, TVS and EPI products.

Competence

The company develops the innovation unceasingly, the development of new products, and in 2000 Meng Yao Shandong University Institute of microelectronics set up R & D cooperation body established in 2004, Ji'nan technology center, founded in 2012, the Ji'nan Municipal Engineering Research Center, and hired a professor at Shandong University, Taiwan industry experts and technical consultants involved in the promotion of product technology.

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The company established the management concept of "people-oriented, pioneering and innovating, market oriented and customer satisfaction", and developed the spirit of continuous learning, striving to go up and surpassing bravely, aiming to become the world's leading semiconductor manufacturing base and development base.

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The Raw Silicon Wafer
Specifications: 3 inch to 4 inch monocrystalline silicon N light silicon chip, 3 inch to 4 inch silicon N/P type silicon wafer

By adding phosphorus or boron doped, using MCZ technology, the production size is 3 inch, 4 inch, 0.003-55 resistor.Cm, 200-350um thickness of different type N or type P monocrystalline silicon wafer, and silicon wafer edge positioning production according to customer requirements, chamfered silicon, N silicon, P silicon etc. the resistivity and thickness, production according to customer requirements.

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The Raw Silicon Wafer parameter configuration table
3-inch mono crystal silicon N-type light doped waferparameter configuration table
4-inch mono crystal silicon N-type light doped wafer parameter configuration table
3-inch mono crystal silicon heavy doped wafer parameter configuration table
4 inch monocrystal silicon heavy doped wafer parameter configuration table

3-inch mono crystal silicon N-type light doped wafer

ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Lifeμs	External Diametermm	Dopant	Form				Radial uniformitty of resistivity
ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Lifeμs	External Diametermm	Dopant	AS cut	Lapping	Chamfering	Flattingiece	Radial uniformitty of resistivity
5-10	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
10-15	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
15-20	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
20-25	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
25-30	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
30-35	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
35-40	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
40-45	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
45-50	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%
50-55	200-350	<111>	＞100	76.2±0.3	Phosphorus	√	√	√	√	≤20%

4-inch mono crystal silicon N-type light doped wafer

ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Lifeμs	External Diametermm	Dopant	Form				Radial uniformitty of resistivity
ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Lifeμs	External Diametermm	Dopant	AS cut	Lapping	Chamfering	Flattingiece	Radial uniformitty of resistivity
5-10	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
10-15	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
15-20	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
20-25	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
25-30	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
30-35	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
35-40	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
40-45	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
45-50	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%
50-55	200-350	<111>	＞100	101.6±0.3	Phosphorus	√	√	√	√	≤20%

3-inch mono crystal silicon heavy doped wafer

ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Model	External Diametermm	Dopant	Form				Radial uniformitty of resistivity
ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Model	External Diametermm	Dopant	AS cut	Lapping	Chamfering	Flattingiece	Radial uniformitty of resistivity
0.003-0.005	200-350	<111>	N/P	76.2±0.3	Phosphorus/Boron	/	√	√	√	/
0.005-0.008	200-350	<111>	N/P	76.2±0.3	Phosphorus/Boron	/	√	√	√	/
0.02-0.03	200-350	<111>	N/P	76.2±0.3	Phosphorus/Boron	/	√	√	√	/

4 inch monocrystal silicon heavy doped wafer

ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Model	External Diametermm	Dopant	Form				Radial uniformitty of resistivity
ResistivityΩ·CM	Thicknessμm	Crystal Orientation	Model	External Diametermm	Dopant	AS cut	Lapping	Chamfering	Flattingiece	Radial uniformitty of resistivity
0.003-0.005	200-350	<111>	N/P	101.6±0.3	Phosphorus/Boron	/	√	√	√	/
0.005-0.008	200-350	<111>	N/P	101.6±0.3	Phosphorus/Boron	/	√	√	√	/
0.02-0.03	200-350	<111>	N/P	101.6±0.3	Phosphorus/Boron	/	√	√	√	/

Contact us

Address: No. 7060, two industrial road, Zhangqiu, Ji'nan, Shandong, China
E-mail：etongelec@163.com
Tel：+86-0531-83313915
Fax：+86-0531-83314122

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