EPI Chip (epitaxial chip)
The epitaxial film is used as the carrier, and the special product characteristics are obtained by diffusion and glass passivation. The oscillations of the TRR waveform are smaller and the application interference is small.
Epitaxial film is a monocrystalline silicon sheet which is grown on the surface of the substrate by an epitaxial process. The epitaxial film is used as the carrier, and the special product characteristics are obtained by diffusion and glass passivation. The oscillations of the TRR waveform are smaller and the application interference is small.
It can meet the customer's long time work demand under the bad conditions such as high temperature, high humidity, strong electric field and so on.
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- EPI chip parameter configuration table
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Parameter configuration table
|
Dimension |
A |
B |
C |
D |
|
Limits ±12 |
Limits ±2 |
Limits ±3 |
Limits ±1 |
|
|
1A |
50 |
12 |
27 |
2 |
|
2~4A |
64 |
12 |
41 |
2 |
|
3~6A |
72 |
12 |
49 |
2 |
|
5~8A |
84 |
12 |
61 |
2 |
|
8~10A |
95 |
12 |
72 |
2 |
|
Parameter |
Symbol |
SF50 |
SF64 |
SF72 |
SF84 |
SF95 |
Unit |
|
Peak Inverse V |
PIV |
100 ~ 800 |
Volts |
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|
Forward Current |
IF |
1 |
3 |
5 |
8 |
10 |
Amps |
|
Forward Volts |
VF |
PIV：200V VF spec. 0.9 PIV：400V VF spec. 1.25 PIV：600V VF spec. 1.7 PIV：800V VF spec. 2.2 |
Volts |
||||
|
Reverse recovery time |
TRR |
20~35 |
ns |
||||
|
Surge Current |
IFSM |
30 |
100 |
125 |
Amp/8.3ms |
||
|
Leakage at 100℃ |
IRFM |
400 |
uA |
||||
|
Junction Temp |
TJ,MAX |
150 |
Degrees ℃ |
||||
|
Leakage 25℃ |
IRFM |
10.0 |
uA |
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|
Storage Temp |
TST |
-65 ------- 150 |
Degrees ℃ |
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|
Die Attach Temp |
TD |
340~375 |
Degrees ℃/2 min |
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Our company provides PG photolithography process;
Guest system requirements for electrical properties;
Low temperature rise product;
High power products;
White / gold diffusion products;
